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2SB1057P 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic
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2SB1057P
Silicon PNP Power Transistors
Quanzhou Jinmei Electronic
2SB1057P Datasheet PDF : 3 Pages
1
2
3
JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
℃
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V
CEsat
Collector-emitter saturation voltage I
C
=-7A ;I
B
=-0.7A
V
BE
Base-emitter on voltage
I
C
=-7A ; V
CE
=-5V
I
CBO
Collector cut-off current
V
CB
=-150V; I
E
=0
I
EBO
h
FE-1
h
FE -2
Emitter cut-off current
DC current gain
DC current gain
V
EB
=-3V; I
C
=0
I
C
=-20mA ; V
CE
=-5V
I
C
=-1A ; V
CE
=-5V
h
FE -3
DC current gain
I
C
=-7A ; V
CE
=-5V
C
OB
Output capacitance
I
E
=0 ; V
CB
=-10V;f=1MHz
f
T
Transition frequency
I
C
=-0.5A ; V
CE
=-10V
h
FE-2
classifications
R
Q
P
40-80 60-120 100-200
Product Specification
2SB1057
MIN TYP. MAX UNIT
-2.0
V
-1.8
V
-50
μ
A
-50
μ
A
20
40
200
20
450
pF
20
MHz
2
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