B1106 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic

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B1106

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-25mA, RBE=∞

V(BR)EBO Emitter-base breakdown voltage

IE=-50mA, IC=0

VCEsat-1 Collector-emitter saturation voltage IC=-3A ,IB=-6mA

VCEsat-2 Collector-emitter saturation voltage IC=-6A ,IB=-60mA

VBEsat-1 Base-emitter saturation voltage

IC=-3A ,IB=-6mA

VBEsat-2 Base-emitter saturation voltage

IC=-6A ,IB=-60mA

ICBO

Collector cut-off current

VCB=-120V, IE=0

ICEO

Collector cut-off current

VCE=-100V, RBE=∞

hFE

DC current gain

IC=-3A ; VCE=-3V

VD

Diode forward voltage

ID=-6A

Product Specification

2SB1106

MIN TYP. MAX UNIT

-120

V

-7

V

-1.5

V

-3.0

V

-2.0

V

-3.5

V

-100 μA

-10 μA

1000

3.0

V

2

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