2SB1260 데이터 시트보기 (PDF) - Unisonic Technologies
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2SB1260 Datasheet PDF : 4 Pages
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2SB1260
■ TYPICAL CHARACTERICS
-1000
-100
Grounded Emitter Propagation
Characteristics
VCE = -5V
Ta=25℃
-10
-1
-0.1
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
Base to Emitter Voltage, VBE(V)
1000
500
DC Current Gain vs. Collector
Current
Ta=25℃
200
VcE= -3V
100
VcE= -1V
50
20
10
-1 -2 -5 -10 -20 -50-100-200-500-1000-2000
Collector Current, Ic(mA)
1000
500
Gain Bandwidth Product vs. Emitter
Current
Ta=25℃
VCE = -5V
200
100
50
20
10
5
2
1
1
2 5 10 20 50 100200 5001000
Emitter Current, IE (mA)
PNP SILICON TRANSISTOR
Grounded Emitter Output
Characteristics
-1.0 Ta=25℃
-0.8
-0.6
-0.45mA
-0.4mA
-0.35mA
-0.3mA
-0.25mA
-0.4
-0.2mA
-0.15mA
-0.2
-0.1mA
-0.05mA
0
IB =0mA
0 -0.2-0.4-0.6 -0.8-1.0-1.2 -1.4 -1.6-1.8-2.0
Collector to Emitter Voltage, VCE(V)
Collector-emitter Saturation Voltage
vs. Collector Current
Ta=25℃
-2
-1
-0.5
-0.2
-0.1
Ic/IB=20
-0.05
10
-0.02
-0.01
-1 -2 -5 -10 -20 -50-100-200-500-1000-2000
Collector Current, Ic(mA)
1000
500
200
100
Collector Output Capacitance vs.
Collector -Base Voltage
Ta=25℃
f=1MHz
IE=0A
50
20
10
5
2
1
-0.1 -0.2 -0.5-1 -2 -5 -10 -20 -50 -100
Collector to Base Voltage, VCB(V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R208-017,C
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