2SB1254 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SB1254 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1254
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO Collector-emitter voltage
IC=-30mA ; IB=0
-140
V
VCEsat Collector-emitter saturation voltage IC=-6A ;IB=-6mA
-2.5
V
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
ICEO
Collector cut-off current
IEBO
Emitter cut-off current
IC=-6A ;IB=-6mA
VCB=-160V; IE=0
VCE=-140V; IB=0
VEB=-5V; IC=0
-3.0
V
-100 μA
-100 μA
-100 μA
hFE-1
DC current gain
IC=-1A ; VCE=-5V
2000
hFE -2
DC current gain
固I电NC半H导A体NGE SEMICONDUCTOR fT
Transition frequency
Switching times
ton
Turn-on time
ts
Storage time
IC=-6A ; VCE=-5V
5000
30000
IC=-0.5A ; VCE=-10V;f=1MHz
20
MHz
IC=-6A; VCC=50V
IB1=-IB2=-6mA
1.0
μs
1.5
μs
tf
Fall time
1.2
μs
2
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