2SB1197 데이터 시트보기 (PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.

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2SB1197

TRANSISTOR(PNP)

Shenzhen Jin Yu Semiconductor Co., Ltd.  

2SB1 1 97

TRANSISTOR(PNP)

FEATURES

z Low VCE(sat).VCE(sat)<-0.5V(IC / IB = -0.5A /-50mA)

z IC =-0.8A.

z Complements the 2SD1781.

SOT-23

1. BASE

2. EMITTER

3. COLLECTOR

Unit : mm

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

TJ

Tstg

Parameter

Collector- Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

Value

-40

-32

-5

-0.8

200

150

-55-150

Units

V

V

V

A

mW

℃

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE

VCE(sat)

fT

Cob

Test conditions

IC =-50μA, IE=0

IC = -1mA, IB=0

IE= -50μA, IC=0

VCB=-20V,IE=0

VEB= -4V,IC=0

VCE=-3V,IC= -100mA

IC=-500 mA, IB= -50mA

VCE=-5V, IC= -50mA,

f=100MHz

VCB=-10V,IE=0,f=1MHz

MIN

-40

-32

-5

82

50

CLASSIFICATION OF hFE

Rank

Range

Marking

P

82-180

AHP

Q

120-270

AHQ

TYP MAX UNIT

V

V

V

-0.5 μA

-0.5 μA

390

-0.5 V

200

MHz

12

30

pF

R

180-390

AHR

１　

JinYu

semiconductor

www.htsemi.com

Ｄａｔｅ：２０１１／０５

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