2SB1463 데이터 시트보기 (PDF) - Panasonic Corporation
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2SB1463
Panasonic Corporation
2SB1463 Datasheet PDF : 3 Pages
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Transistors
2SB1463
Silicon PNP epitaxial planar type
For high breakdown voltage low-frequency amplification
Complementary to 2SD2240
■ Features
• High collector-emitter voltage (Base open) VCEO
• Low noise voltage NV
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
−150
V
Collector-emitter voltage (Base open) VCEO
−150
V
Emitter-base voltage (Collector open) VEBO
−5
V
Collector current
IC
−50
mA
Peak collector current
ICP
−100
mA
Collector power dissipation
PC
125
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg −55 to +125 °C
0.2+–00..015
3
Unit: mm
0.15+–00..015
1
2
(0.5) (0.5)
1.0±0.1
1.6±0.1
5˚
Marking Symbol: I
1: Base
2: Emitter
3: Collector
EIAJ: SC-75
SSMini3-G1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = −100 µA, IB = 0
−150
V
Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0
−5
V
Collector-base cutoff current (Emitter open) ICBO VCB = −100 V, IE = 0
−1
µA
Forward current transfer ratio *
hFE VCE = −5 V, IC = −10 mA
130
450
Collector-emitter saturation voltage
VCE(sat) IC = −30 mA, IB = −3 mA
−1
V
Transition frequency
fT
VCB = −10 V, IE = 10 mA, f = 200 MHz
200
Collector output capacitance
Cob VCB = −10 V, IE = 0, f = 1 MHz
4
(Common base, input open circuited)
MHz
pF
Noise voltage
NV VCE = −10 V, IC = −1 mA, GV = 80 dB
150
mV
Rg = 100 kΩ, Function = FLAT
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
S
T
hFE
130 to 220 185 to 330 260 to 450
Publication date: January 2003
SJC00089BED
1
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