2SB1392 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SB1392

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

2SB1392

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; RBE= ∞

V(BR)CBO Collector-Base Breakdown Voltage

IC= -10μA; IE= 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= -10μA; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB=B -0.2A

VBE(sat) Base-Emitter Saturation Voltage

IC= -2A; IB=B -0.2A

VBE(on) Base-Emitter On Voltage

IC= -1A; VCE= -4V

ICBO

Collector Cutoff Current

VCB= -50V; IE= 0

ICEO

Collector Cutoff Current

VCE= -50V; RBE= ∞

hFE-1

DC Current Gain

IC= -1A; VCE= -4V

hFE-2

DC Current Gain

IC= -0.1A; VCE= -4V

MIN TYP. MAX UNIT

-60

V

-70

V

-5

V

-1.0 V

-1.2 V

-1.0 V

-10 μA

-10 μA

60

200

35

‹ hFE-1 Classifications

B

C

60-120 100-200

isc Website：www.iscsemi.cn

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