2SB1402 데이터 시트보기 (PDF) - SavantIC Semiconductor
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2SB1402 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-25mA; RBE==
V(BR)CBO Collector-base breakdown voltage
IC=-100µA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-50mA; IC=0
VCEsat-1 Collector-emitter saturation voltage IC=-1.5A ;IB=-3mA
VCEsat-2 Collector-emitter saturation voltage IC=-3A ;IB=-30mA
VBEsat-1 Base-emitter saturation voltage
IC=-1.5A ;IB=-3mA
VBEsat-2 Base-emitter saturation voltage
IC=-3A ;IB=-30mA
ICBO
Collector cut-off current
VCB=-100V; IE=0
ICEO
Collector cut-off current
VCE=-100V; RBE==
hFE
DC current gain
IC=-1.5A ; VCE=-3V
VD
Diode forward voltage
ID=3A
Product Specification
2SB1402
MIN TYP. MAX UNIT
-120
V
-120
V
-7
V
-1.5
V
-3.0
V
-2.0
V
-3.5
V
-10
µA
-10
µA
1000
20000
3.0
V
2
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