2SB1404 데이터 시트보기 (PDF) - Inchange Semiconductor

부품명

상세내역

제조사

2SB1404

Silicon PNP Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Darlington Power Transistor

isc Product Specification

2SB1404

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -120V(Min)

·High DC Current Gain-

: hFE= 1000(Min)@ (VCE= -3V, IC= -1.5A)

APPLICATIONS

·Designed for low frequency power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE UNIT

VCBO

Collector-Base Voltage

-120

V

VCEO Collector-Emitter Voltage

-120

V

VEBO

Emitter-Base Voltage

-7

V

IC

Collector Current-Continuous

-3

A

ICM

Collector Current-Peak

Collector Power Dissipation

@Ta=25℃

PC

Collector Power Dissipation

@TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature

-6

A

2

W

25

150

℃

-55~150 ℃

isc Website：www.iscsemi.cn

Share Link: