2SB1454 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SB1454

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

2SB1454

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -80V(Min)

·Low Collector Saturation Voltage-

: VCE(sat)= -0.5V(Max)@ (IC= -3A, IB=B -0.3A)

·Complement to Type 2SD2202

APPLICATIONS

·Designed for high-current switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-90

V

VCEO Collector-Emitter Voltage

-80

V

VEBO

Emitter-Base Voltage

-6

V

IC

Collector Current-Continuous

-5

A

ICM

Collector Current-Pulse

Collector Power Dissipation

@Ta=25℃

PC

Collector Power Dissipation

@TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature

-9

A

2

W

25

150

℃

-55~150 ℃

isc Website：www.iscsemi.cn

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