2SB1697 데이터 시트보기 (PDF) - ROHM Semiconductor

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2SB1697

Low Frequency Amplifier (-12V, -2A)

ROHM Semiconductor 

Transistors

2SB1697

Low Frequency Amplifier (-12V, -2A)

2SB1697

zFeatures

Low VCE(sat)

VCE(sat) ≤ −180mV

(IC /IB=−1A/−50mA)

zExternal dimensions (Unit : mm)

4.0

1.0

2.5

0.5

(1)

(2)

(3)

Each lead has same dimensions

Abbreviated symbol: FV

ROHM : MPT3

JEITA : SC-62

JEDEC: SOT-89

(1)Base

(2)Collector

(3)Emitter

zAbsolute maximum ratings (Ta=25°C)

Parameter

Symbol Limits

Collector-base voltage

VCBO

−15

Collector-emitter voltage

VCEO

−12

Emitter-base voltage

VEBO

−6

Collector current

−2

IC

−4

Collector power dissipation

PC

500

Junction temperature

Tj

150

Storage temperature

Tstg −55 to +150

∗1 Single pulse, PW=1ms

∗2 When mounted on a 40x40x0.7 mm ceramic board.

zPackaging specifications

Unit

V

V

V

A(DC)

A(Pulse) ∗1

mW ∗2

°C

°C

Type

2SB1697

Package

Code

Basic ordering unit (pieces)

Taping

T100

1000

zElectrical characteristics (Ta=25°C)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

Transition frequency

Output capacitance

∗ Pulsed

Symbol

BVCBO

BVCEO

BVEBO

ICBO

IEBO

VCE(sat)

hFE

fT

Cob

Min. Typ. Max. Unit

Conditions

−15

−

−

V IC= −10µA

−12

−

−

V IC= −1mA

−6

−

−

V IE= −10µA

−

−

−100 nA VCB= −15V

−

−

−100 nA VEB= −6V

−

−100 −180 mV IC/IB= −1A/ −50mA

270

−

680

− VCE= −2V, IC= −200mA∗

−

360

−

MHz VCE= −2V, IE=200mA, f=100MHz∗

−

15

−

pF VCB=−10V, IE=0A, f=1MHz

Rev.A

1/2

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