2SB1643 데이터 시트보기 (PDF) - KEXIN Industrial

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2SB1643

PNP Transistors

KEXIN Industrial 

SMD Type

PNP Transistors

2SB1643

Transistors

■ Features

● High collector to emitter VCEO

● High collector power dissipation PC

TO-252

6.50+0.15

-0.15

5.30+0.2

-0.2

2.30 +0.1

-0.1

0.50 +0.8

-0.7

0.80+0.1

-0.1

0.127

m ax

Unit: mm

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector current

Collector Current - Pulse

Base current

Collector Power Dissipation

Junction Temperature

Storage Temperature range

Tc = 25℃

Ta = 25℃

Symbol

VCBO

VCEO

VEBO

IC

ICP

IB

PC

TJ

Tstg

2.3

4 .60 +0.15

-0.15

0.60+ 0.1

- 0.1

Rating

Unit

-60

-60

V

-6

-3

-6

A

-1

40

W

1.3

150

℃

-55 to 150

1 Base

2 Collector

3 Emitter

■ Electrical Characteristics Ta = 25℃

Parameter

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Collector-emitter cut-off current

Emitter cut-off current

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

Transition frequency

Symbol

Test Conditions

VCBO Ic= -100 uA， IE=0

VCEO Ic= -1 mA, IB=0

VEBO IE= -100 uA， IC=0

ICBO VCB= -60V , IE=0

ICEO VCE= -40V , IB=0

IEBO VEB= -6V , IC=0

VCE(sat) IC=-2 A, IB=-50 mA

VBE(sat) IC=-2 A, IB=-50 mA

hFE VCE= -4V, IC= -500 mA

fT VCE= -12V, IC= -200 mA,f=10MHz

■ Classification of hfe

Type

Range

2SB1643-Q

300-500

2SB1643-P

400-700

Min Typ Max Unit

-60

-60

V

-6

-0.1

-10 uA

-0.1

-1

V

-1.2

300

700

30

MHz

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