2SB1558 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic

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2SB1558

Silicon PNP Darlington Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Darlington Power Transistors

Product Specification

2SB1558

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0

VCEsat Collector-emitter saturation voltage IC=-7A ;IB=-7mA

VBE

Base-emitter on voltage

IC=-7A ; VCE=-5V

ICBO

Collector cut-off current

VCB=-140V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE-1

DC current gain

IC=-7A ; VCE=-5V

hFE-2

DC current gain

IC=-12A ; VCE=-5V

Cob

Output capacitance

IE=0 ; VCB=-10V;f=1MHz

fT

Transition frequency

IC=-1A ; VCE=-5V

MIN TYP. MAX UNIT

-140

V

-2.5

V

-3.0

V

-5

μA

-5

μA

5000

30000

2000

170

pF

30

MHz

‹ hFE-1 Classifications

A

B

5000-12000

9000-18000

C

15000-30000

2

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