2SB1642 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic

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2SB1642

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

Product Specification

2SB1642

DESCRIPTION

·With TO-220F package

·Low collector saturation voltage:

VCE(SAT)=-1.5V(Max) at IC=-2.5A,IB=-0.25A

·Collector power dissipation:

PC=25W(TC=25℃)

APPLICATIONS

·Audio frequency power amplifier applications

PINNING

PIN

1

2

3

DESCRIPTION

Emitter

Collector

Base

Fig.1 simplified outline (TO-220F) and symbol

Absolute maximum ratings (Ta=25℃)

SYMBOL

PARAMETER

VCBO

Collector-base voltage

VCEO

Collector-emitter voltage

VEBO

Emitter-base voltage

IC

Collector current

IB

Base current

PC

Collector power dissipation

Tj

Junction temperature

Tstg

Storage temperature

CONDITIONS

Open emitter

Open base

Open collector

Ta=25℃

TC=25℃

VALUE

-60

-60

-7

-4

-1

2.0

25

150

-55~150

UNIT

V

V

V

A

A

W

℃

℃

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