2SB1647 데이터 시트보기 (PDF) - New Jersey Semiconductor
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2SB1647 Datasheet PDF : 2 Pages
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Silicon PNP Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc= -30mA ; IB= 0
VcE(sat) Collector-Emitter Saturation Voltage lc=-10A; lB=-10mA
VeE(sat) Base-Emitter Saturation Voltage
lc=-10A;lB=-10mA
ICBO
Collector Cutoff Current
VCB=-150V;IE=0
IEBO
Emitter Cutoff Current
VEB= -5V; lc= 0
IIFE
DC Current Gain
lc=-10A;VCE=-4V
COB
Output Capacitance
lE=0;VCB=-10V;f,est=1MHz
fr
Current-Gain—Bandwidth Product
IE=2A;VCE=-12V
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
Vcc= -40V, RL= 4 0 ,
lc=-10A;lBi=-lB2=-10mA,
• hFE Classifications
o
P
Y
5000-12000 6500-20000 15000-30000
2SB1647
MIN TYP. MAX UNIT
-150
V
-2.5
V
-3.0
V
-100 u A
-100 u A
5000
320
PF
45
MHz
0.7
ns
1.6
us
1.1
us
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