2SB776(2016) 데이터 시트보기 (PDF) - Unisonic Technologies

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2SB776
(Rev.:2016)

MEDIUM POWER LOW VOLTAGE TRANSISTOR

Unisonic Technologies 

2SB776

PNP PLANAR TRANSISTOR

 ABSOLUTE MAXIMUM RATINGS ( TA=25C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-50

V

Collector-Emitter Voltage

VCEO

-50

V

Emitter-Base Voltage

VEBO

-5

V

Collector Current

DC

PULSE

IC

-3

A

-7

A

Base Current

IB

-0.6

A

Collector Dissipation (TC=25C)

TO-126

TO-252

PC

10

W

25

W

Junction Temperature

Storage Temperature

TJ

+150

C

TSTG

-55 ~ +150

C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 ELECTRICAL CHARACTERISTICS (Ta=25C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

Collector Cut-Off Current

ICBO VCB=-50V, IE=0

Emitter Cut-Off Current

IEBO VEB=-3V, Ic=0

DC Current Gain (Note)

hFE1 VCE=-2V, Ic=-20mA

hFE2 VCE=-2V, Ic=-1A

Collector-Emitter Saturation Voltage VCE(SAT) Ic=-2A, IB=-0.2A

Base-Emitter Saturation Voltage

VBE(SAT) Ic=-2A, IB=-0.2A

Current Gain Bandwidth Product

fT

VCE=-5V, Ic=-0.1A

Output Capacitance

Cob VCB=-10V, IE=0, f=1MHz

Note: Pulse test: PW<300s, Duty Cycle<2%

 CLASSIFICATION OF hFE2

MIN TYP MAX UNIT

-1000 nA

-1000 nA

100 200

100 150 400

-0.3 -0.5 V

-1.0 -2.0 V

80

MHz

45

pF

RANK

RANGE

Q

100-200

P

160-320

E

200-400

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 4

QW-R204-003.D

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