2SB766AS 데이터 시트보기 (PDF) - Transys Electronics Limited

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2SB766AS

SOT-89 Plastic-Encapsulated Transistors

Transys Electronics Limited 

Transys

Electronics

LIMITED

SOT-89 Plastic-Encapsulated Transistors

2SB766 TRANSISTOR (PNP)

FEATURES

Power dissipation

PCM:

500 mW (Tamb=25℃)

Collector current

ICM:

-1 A

Collector-base voltage

V(BR)CBO:

-30 V

Operating and storage junction temperature range

TJ, Tstg: -55℃ to +150℃

SOT-89

1. BASE

2. COLLECTOR

3. EMITTER

1

2

3

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

Test conditions

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE(1)

hFE(2)

VCE(sat)

VBE(sat)

fT

Cob

Ic=-10µA, IE=0

Ic=-2mA, IB=0

IE=-10µA, IC=0

VCB=-20V, IE=0

VEB=-4V, IC=0

VCE=-10V, IC=-500mA

VCE=-5V, IC=-1A

IC=-500mA, IB=-50mA

IC=-500mA, IB=-50mA

VCE=-10V, IC=-50mA, f=200MHz

VCB=-10V, IE=0, f=1MHz

MIN TYP MAX UNIT

-30

V

-25

V

-5

V

-0.1 µA

-0.1 µA

85

340

50

-0.2 -0.4 V

-0.85 -1.2 V

200

MHz

20

30

pF

CLASSIFICATION OF hFE(1)

Rank

Range

Marking

Q

85-170

AQ

R

120-240

AR

S

170-340

AS

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