C1096 데이터 시트보기 (PDF) - Inchange Semiconductor
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C1096 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC1096
DESCRIPTION
·With TO-202 package
·Low breakdown voltage
·High current
·High fT
APPLICATIONS
·For audio frequency power amplifier
and low speed switching applications
·Suitable for output stages of 3 to 5 watts
car radio sets and car stereo
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-202) and symbol
固I电NC半H导A体NGE SEMICONDUCTOR Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
CONDITIONS
Open emitter
Open base
VALUE
40
30
UNIT
V
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
3
A
ICM
Collector current-peak
6
A
IB
Base current
0.6
A
PC
Collector power dissipation
Ta=25℃
TC=25℃
1.2
W
10
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
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