C1108 데이터 시트보기 (PDF) - Inchange Semiconductor
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C1108 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC1108
DESCRIPTION
·
·With TO-220C package
·High breakdown voltage :VCEO=100V
·High current :4A
APPLICATIONS
·For power amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
VALUE
100
100
5
4
40
150
-55~150
UNIT
V
V
V
A
W
℃
℃
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