2SC1161 데이터 시트보기 (PDF) - SavantIC Semiconductor
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2SC1161 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC1161
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=500mA; IB=50mA
VBE sat Base-emitter saturation voltage
IC=500mA; IB=50mA
ICBO
Collector cut-off current
VCB=120V; IE=0
IEBO
Emitter cut-off current
hFE
DC current gain
VEB=6V; IC=0
IC=200mA ; VCE=5V
fT
Transition frequency
IC=200mA ; VCE=10V
MIN TYP. MAX UNIT
120
V
6
V
1.5
V
2.0
V
1.0 µA
1.0 µA
30
200
5
MHz
2
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