B953A 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic

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B953A

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

Product Specification

2SB953 2SB953A

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO

Collector-emitter

voltage

2SB953

2SB953A

IC=-10mA IB=0

VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.16A

VBEsat

ICBO

Base-emitter saturation voltage

IC=-5A; IB=-0.16A

Collector

cut-off current

2SB953 VCB=-40V; IE=0

2SB953A VCB=-50V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE-1

DC current gain

IC=-0.1A ; VCE=-2V

hFE-2

DC current gain

IC=-2A ; VCE=-2V

fT

Transition frequency

COB

Collector output capacitance

Switching times

IC=-0.5A; VCE=-10V,f=10MHz

f=1MHz ; VCB=-10V

ton

Trun-on time

ts

Storage time

tf

Fall time

IC=-2A

IB1=-66mA, IB2=66mA

‹ hFE-2 Classifications

Q

P

90-180

130-260

MIN TYP. MAX UNIT

-20

V

-40

-0.6

V

-1.5

V

-50 μA

-50 μA

45

90

260

150

MHz

140

pF

0.1

μs

0.5

μs

0.1

μs

2

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