C1518 데이터 시트보기 (PDF) - Panasonic Corporation
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C1518 Datasheet PDF : 4 Pages
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Transistors
2SC1518
Silicon NPN epitaxial planar type
For high-frequency bias oscillation of tape recorders
For DC-DC converter
■ Features
• Low collector-emitter saturation voltage VCE(sat)
• Satisfactory operation performances and high efficiency with a low-
voltage power supply
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
25
V
Collector-emitter voltage (Base open) VCEO
20
V
Emitter-base voltage (Collector open) VEBO
5
V
Collector current
IC
1
A
Peak collector current
ICP
1.5
A
Collector power dissipation
PC
1
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
5.9±0.2
Unit: mm
4.9±0.2
0.7±0.1
0.45+–00..12
0.45+–00..12
(1.27)
(1.27)
1: Emitter
123
2: Collector
3: Base
2.54±0.15
EIAJ: SC-51
TO-92L-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
25
Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0
20
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
5
Collector-base cutoff current (Emitter open) ICBO VCB = 25 V, IE = 0
Collector-emitter cutoff current (Base open) ICEO VCE = 20 V, IB = 0
Forward current transfer ratio
hFE1 * VCE = 2 V, IC = 500 mA
90
hFE2 VCE = 2 V, IC = 1 A
50
Collector-emitter saturation voltage
VCE(sat) IC = 1 A, IB = 50 mA
Base-emitter saturation voltage
VBE(sat) IC = 500 mA, IB = 50 mA
Transition frequency
fT
VCB = 10 V, IE = −50 mA, f = 200 MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
100
1
330
100
0.5
1.2
150
12 20
V
V
V
nA
µA
V
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
S
hFE1
90 to 155 130 to 220 185 to 330
Publication date: November 2002
SJC00107BED
1
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