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2SC1577 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SC1577
Iscsemi
Inchange Semiconductor Iscsemi
2SC1577 Datasheet PDF : 3 Pages
1 2 3
Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=5A; IB=1A
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=5A; IB=1A
VCB=500V; IE=0
VEB=7V; IC=0
hFE
DC current gain
IC=3A ; VCE=4V
fT
Transition frequency
IC=0.5A ; VCE=12V
Product Specification
2SC1577
MIN TYP. MAX UNIT
400
V
7
V
0.5
V
1.3
V
0.1 mA
0.1 mA
30
7
MHz
2

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