2SC1783 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SC1783

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A

VBEsat Base-emitter saturation voltage

IC=5A; IB=0.5A

ICBO

Collector cut-off current

VCB=180V; IE=0

IEBO

Emitter cut-off current

VEB=6V; IC=0

hFE

DC current gain

IC=3A ; VCE=4V

COB

Collector output capacitance

IE=0 ; VCB=10V;f=1MHz

fT

Transition frequency

IC=1A ; VCE=10V

Product Specification

2SC1783

MIN TYP. MAX UNIT

120

V

6

V

1.5

V

2.0

V

100 μA

100 μA

30

165

pF

10

MHz

2

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