2SC1580 데이터 시트보기 (PDF) - SavantIC Semiconductor

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2SC1580

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC1580

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ; IC=0

VCEsat Collector-emitter saturation voltage IC=10A; IB=2A

VBEsat

Base-emitter saturation voltage

IC=10A; IB=2A

ICBO

Collector cut-off current

VCB=600V; IE=0

IEBO

Emitter cut-off current

VEB=7V; IC=0

hFE

DC current gain

IC=5A ; VCE=4V

fT

Transition frequency

IC=0.5A ; VCE=10V

MIN TYP. MAX UNIT

500

V

7

V

1.5

V

2.0

V

0.1 mA

0.1 mA

10

25

5

MHz

2

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