C1507 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic
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C1507 Datasheet PDF : 3 Pages
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Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCBO(BR) Collector-base breakdown voltage
IC=10μA ;IE=0
VCEO(BR)
VEBO(BR)
Collector-emitter breakdown voltage IC=10mA ;IB=0
Emitter-base breakdown voltage
IE=10μA ;IC=0
VCEsat Collector-emitter saturation voltage IC=50mA ;IB=5mA
ICBO
Collector cut-off current
VCB=200V;IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE
DC current gain
IC=10mA ; VCE=10V
COB
Output capacitance
IE=0; VCB=50V;f=1MHz
fT
Transition frequency
IC=10mA ; VCE=30V
hFE-1 classifications
R
O
Y
40-80
70-140 120-240
www.jmnic.com
2SC1507
MIN TYP. MAX UNIT
300
V
300
V
7
V
2.0
V
100
μA
100
μA
40
240
4
pF
40
80
MHz
JMnic
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