2SC2206 데이터 시트보기 (PDF) - Panasonic Corporation
부품명
상세내역
제조사
2SC2206 Datasheet PDF : 4 Pages
| |||
Transistors
2SC2206
Silicon NPN epitaxial planar type
For high-frequency amplification
Complementary to 2SA1254
■ Features
• Optimum for RF amplification of FM/AM radios
• High transition frequency fT
• M type package allowing easy automatic and manual insertion
as well as stand-alone fixing to the printed circuit board
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
30
V
Collector-emitter voltage (Base open) VCEO
20
V
Emitter-base voltage (Collector open) VEBO
5
V
Collector current
IC
30
mA
Peak collector current
ICP
60
mA
Collector power dissipation
PC
400
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
6.9±0.1
(1.5)
(1.5)
R 0.7
R 0.9
Unit: mm
2.5±0.1
(1.0)
(0.85)
0.55±0.1
0.45±0.05
3
2
1
(2.5) (2.5)
1: Base
2: Collector
3: Emitter
M-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
30
V
Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0
20
V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
5
V
Base-emitter voltage
VBE VCE = 10 V, IC = 1 mA
0.7
V
Forward current transfer ratio *
hFE VCE = 10 V, IC = 1 mA
70
220
Collector-emitter saturation voltage
VCE(sat) IC = 10 mA, IB = 1 mA
0.1
V
Transition frequency
fT
VCB = 10 V, IE = −1 mA, f = 200 MHz 150 300
MHz
Noise figure
NF VCB = 10 V, IE = −1 mA, f = 5 MHz
2.8
4
dB
Common-emitter reverse transfer
capacitance
Cre VCB = 10 V, IE = −1 mA, f = 10.7 MHz
1.5
pF
Reverse transfer impedance
Zrb VCB = 10 V, IE = −1 mA, f = 2 MHz
50
Ω
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
B
C
hFE
70 to 140 110 to 220
Publication date: January 2003
SJC00111BED
1
Share Link: 