2SC1953 데이터 시트보기 (PDF) - Panasonic Corporation
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2SC1953 Datasheet PDF : 3 Pages
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Power Transistors
2SC1953
Silicon NPN epitaxial planar type
For audio system/pre-drive
Complementary to 2SA0914
■ Features
• High collector-emitter voltage (Base open) VCEO
• Small collector output capacitance (Common base, input open cir-
cuited) Cob
• A complementary pair with 2SA0914, is optimum for the pre-driver
stage of a 60 W to 100 W output amplifier
• TO-126B package which requires no insulation plate for installa-
tion to the heat sink
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
150
V
Collector-emitter voltage (Base open) VCEO
150
V
Emitter-base voltage (Collector open) VEBO
5
V
Collector current
IC
50
mA
Peak collector current
ICP
100
mA
Collector power dissipation
PC
1
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
φ 3.16±0.1
8.0+–00..15
Unit: mm
3.2±0.2
0.75±0.1
0.5±0.1
4.6±0.2
2.3±0.2
0.5±0.1
1.76±0.1
123
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = 100 µA, IB = 0
150
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
5
Collector-base cutoff current (Emitter open) ICBO VCB = 100 V, IE = 0
Forward current transfer ratio *
hFE VCE = 5 V, IC = 10 mA
130
Collector-emitter saturation voltage
VCE(sat) IC = 30 mA, IB = 3 mA
Transition frequency
fT
VCB = 10 V, IE = −10 mA, f = 200 MHz 70
Collector output capacitance
(Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
V
V
1
µA
330
1
V
MHz
3
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
hFE
130 to 220 185 to 330
Publication date: January 2003
SJD00096BED
1
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