C1847 데이터 시트보기 (PDF) - Inchange Semiconductor

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C1847

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC1847

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=2mA;IB=0

V(BR)CBO Collector-base breakdown voltage

IC=1mA ;IE=0

VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.2A

VBEsat Base-emitter saturation voltage

IC=2A ;IB=0.2A

ICBO

Collector cut-off current

VCB=20V; IE=0

ICEO

Collector cut-off current

VCE=10V; IB=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE

DC current gain

IC=1A ; VCE=5V

COB

Output capacitance

IE=0 ; VCB=20V;f=1MHz

fT

Transition frequency

IC=0.5A ; VCB=5V,f=200MHz

MIN TYP. MAX UNIT

40

V

50

V

1.0

V

1.5

V

1

μA

100 μA

10 μA

80

220

35

pF

150

MHz

‹ hFE Classifications

Q

R

80-160

120-220

2

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