2SC1870 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SC1870

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0

V(BR)CBO Collector-base breakdown voltage

IC=1mA ; IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ; IC=0

VCEsat Collector-emitter saturation voltage IC=5A; IB=1A

VBEsat Base-emitter saturation voltage

IC=5A; IB=1A

ICBO

Collector cut-off current

VCB=300V; IE=0

IEBO

Emitter cut-off current

VEB=7V; IC=0

hFE

DC current gain

IC=10A ; VCE=5V

Product Specification

2SC1870

MIN TYP. MAX UNIT

250

V

300

V

7

V

1.0

V

1.5

V

0.1

mA

0.1

mA

15

2

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