Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA ; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ; IC=0
VCEsat Collector-emitter saturation voltage IC=5A; IB=1A
VBEsat Base-emitter saturation voltage
IC=5A; IB=1A
ICBO
Collector cut-off current
VCB=300V; IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE
DC current gain
IC=10A ; VCE=5V
Product Specification
2SC1870
MIN TYP. MAX UNIT
250
V
300
V
7
V
1.0
V
1.5
V
0.1
mA
0.1
mA
15
2