2SC1985 데이터 시트보기 (PDF) - SavantIC Semiconductor
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2SC1985 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC1985 2SC1986
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
2SC1985
2SC1986
IC=25mA ,IB=0
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A
ICBO
Collector
cut-off current
2SC1985 VCB=80V; IE=0
2SC1986 VCB=100V; IE=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE
DC current gain
IC=1A ; VCE=4V
fT
Transition frequency
IC=0.5A ; VCE=12V
Switching times
tr
Rise time
tstg
Storage time
tf
Fall time
IC=3A ; VCC=9V
IB1=-IB2=0.3A;RL=3C
MIN TYP. MAX UNIT
60
V
80
1.0
V
1.0
mA
1.0
mA
40
10
MHz
1.1
µs
1.8
µs
0.55
µs
2
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