2SC1894 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic

부품명

상세내역

제조사

2SC1894

Silicon NPN Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A

VBEsat Base-emitter saturation voltage

ICBO

Collector cut-off current

IEBO

Emitter cut-off current

IC=4A; IB=0.8A

VCB=750V; IE=0

VEB=5V; IC=0

hFE

DC current gain

IC=1A ; VCE=5V

fT

Transition frequency

IC=0.1A ; VCE=10V

COB

Collector output capacitance

IE=0; VCB=10V;f=1MHz

Product Specification

2SC1894

MIN TYP. MAX UNIT

600

V

5

V

5.0

V

1.5

V

50 μA

50 μA

10

40

3

MHz

155

pF

2

Share Link: