2SC2634T 데이터 시트보기 (PDF) - Panasonic Corporation
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2SC2634T Datasheet PDF : 4 Pages
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Transistors
2SC2634
Silicon NPN epitaxial planar type
For low-frequency and low-noise amplification
Complementary to 2SA1127
■ Features
• Low noise voltage NV
• High forward current transfer ratio hFE
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
60
V
Collector-emitter voltage (Base open) VCEO
55
V
Emitter-base voltage (Collector open) VEBO
7
V
Collector current
IC
100
mA
Peak collector current
ICP
200
mA
Collector power dissipation
PC
400
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
5.0±0.2
Unit: mm
4.0±0.2
0.7±0.1
0.45+–00..115
2.5+–00..26
2.5+–00..26
0.45+–00..115
1 23
1: Emitter
2: Collector
3: Base
EIAJ: SC-43A
TO-92-B1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Collector-emitter cutoffcurrent (Base open)
Forward current transfer ratio *
Collector-emitter saturation voltage
Transition frequency
Noise voltage
VCBO
VCEO
VEBO
VBE
ICBO
ICEO
hFE
VCE(sat)
fT
NV
IC = 10 µA, IE = 0
IC = 1 mA, IB = 0
IE = 10 µA, IC = 0
VCE = 1 V, IC = 30 mA
VCB = 10 V, IE = 0
VCE = 10 V, IB = 0
VCE = 5 V, IC = 2 mA
IC = 100 mA, IB = 10 mA
VCB = 5 V, IE = −2 mA, f = 200 MHz
VCE = 10 V, IC = 1 mA, GV = 80 dB
Rg = 100 kΩ, Function = FLAT
60
55
7
1
1 100
0.01 1.00
180
700
0.6
200
150
V
V
V
V
nA
µA
V
MHz
mV
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
S
T
hFE
180 to 360 260 to 520 360 to 700
Publication date: March 2003
SJC00119BED
1
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