2SC2613 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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2SC2613

Silicon NPN Triple Diffused

Hitachi -> Renesas Electronics 

2SC2613

Electrical Characteristics (Ta = 25°C)

Item

Collector to emitter sustain

voltage

Symbol Min

VCEO(sus)

400

VCEX(sus)

400

Typ

—

—

Emitter to base breakdown

V(BR)EBO

7

—

voltage

Collector cutoff current

I CBO

—

—

I CEO

—

—

DC current transfer ratio

hFE1

15

—

hFE2

7

—

Collector to emitter saturation VCE(sat)

—

—

voltage

Base to emitter saturation

VBE(sat)

—

—

voltage

Turn on time

Storage time

Fall time

Note: 1. Pulse test.

t on

—

—

t stg

—

1.2

tf

—

—

Max Unit

—

V

—

V

—

V

100 µA

100 µA

—

—

1.0 V

1.5 V

1.0 µs

2.5 µs

1.0 µs

Test conditions

IC = 0.2 A, RBE = ∞,

L = 100 mH

IC = 5 A, IB1 = –IB2 = 1 A

VBE = –5 V, L = 180 µH,

Clamped

IE = 10 mA, IC = 0

VCB = 400 V, IE = 0

VCE = 350 V, RBE = ∞

VCE = 5 V, IC = 2.5 A*1

VCE = 5 V, IC = 5 A*1

IC = 2.5 A, IB = 0.5 A*1

IC = 2.5 A, IB = 0.5 A*1

IC = 5 A, IB1 = –IB2 = 1 A,

VCC ≅ 150 V

Maximum Collector Dissipation Curve

60

40

20

0

50

100

150

Case Temperature TC (°C)

Area of Safe Operation

100

iC (peak)

10

IC (max)

(Continuous)

1.0

0.1

Ta = 25°C, 1 Shot

0.01

1 3 10 30 100 300 1,000

Collector to emitter Voltage VCE (V)

2

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