2SC2620 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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2SC2620

Silicon NPN Epitaxial Planar

Hitachi -> Renesas Electronics 

2SC2620

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Ratings

Unit

30

V

20

V

4

V

20

mA

100

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO 30

—

voltage

Collector to emitter breakdown V(BR)CEO 20

—

voltage

Emitter to base breakdown

V(BR)EBO

4

—

voltage

Collector cutoff current

I CBO

—

Emitter cutoff current

I EBO

—

DC current transfer ratio

hFE*1

60

Collector to emitter saturation VCE(sat)

—

voltage

—

—

—

0.17

Base to emitter voltage

VBE

—

0.72

Gain bandwidth product

fT

—

940

Collector output capacitance Cob

—

0.9

Note: 1. The 2SC2620 is grouped by hFE as follows.

Grade

B

C

Mark

QB

QC

hFE

60 to 120 100 to 200

Max

—

—

—

0.5

0.5

200

—

—

—

—

Unit

V

V

V

µA

µA

V

V

MHz

pF

Test conditions

IC = 10 µA, IE = 0

IC = 1 mA, RBE = ∞

IE = 10 µA, IC = 0

VCB = 10 V, IC = 0

VEB = 2 V, IC = 0

VCE = 6 V, IC = 1 mA

IC = 20 mA, IB = 4 mA

VCE = 6 mA, IC = 1 mA

VCE = 6 V, IC = 5 mA

VCB = 10 V, IE = 0, f = 1 MHz

See characteristic curves of 2SC535.

2

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