2SC2620QCTL-E 데이터 시트보기 (PDF) - Renesas Electronics

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2SC2620QCTL-E

Silicon NPN Epitaxial Planar

Renesas Electronics 

2SC2620

Electrical Characteristics

Item

Symbol Min

Collector to base breakdown voltage

V(BR)CBO

30

Collector to emitter breakdown voltage V(BR)CEO

20

Emitter to base breakdown voltage

V(BR)EBO

4

Collector cutoff current

ICBO

—

Emitter cutoff current

DC current transfer ratio

IEBO

—

hFE*1

60

Collector to emitter saturation voltage

VCE(sat)

—

Base to emitter voltage

VBE

—

Gain bandwidth product

fT

—

Collector output capacitance

Cob

—

Note: 1. The 2SC2620 is grouped by hFE as follows.

Grade

B

C

Mark

QB

QC

hFE

60 to 120 100 to 200

Typ

—

—

—

—

—

—

0.17

0.72

940

0.9

Max

—

—

—

0.5

0.5

200

—

—

—

—

Unit

V

V

V

µA

µA

V

V

MHz

pF

(Ta = 25°C)

Test conditions

IC = 10 µA, IE = 0

IC = 1 mA, RBE = ∞

IE = 10 µA, IC = 0

VCB = 10 V, IC = 0

VEB = 2 V, IC = 0

VCE = 6 V, IC = 1 mA

IC = 20 mA, IB = 4 mA

VCE = 6 mA, IC = 1 mA

VCE = 6 V, IC = 5 mA

VCB = 10 V, IE = 0, f = 1 MHz

Rev.2.00 Aug 10, 2005 page 2 of 7

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