2SC2525 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SC2525

SILICON POWER TRANSISTOR

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=1mA; RBE=∞

V(BR)CBO Collector-base breakdown voltage

IC=50μA; IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=50μA; IC=0

VCEsat Collector-emitter saturation voltage IC=5 A;IB=0.5 A

VBE

Base-emitter voltage

IC=5A ; VCE=5V

ICBO

Collector cut-off current

VCB=120V; IE=0

IEBO

Emitter cut-off current

VEB=7V; IC=0

hFE-1

DC current gain

IC=1A ; VCE=5V

hFE-2

DC current gain

IC=7A ; VCE=5V

fT

Transition frequency

IC=1A ; VCB=10V,f=1MHz

COB

Output capacitance

IE=0; VCB=10V;f=1MHz

Switching times

tr

Rise time

ts

Storage time

tf

Fall time

IC=7.5A; RL=4Ω

IB1=-IB2=0.75A

Product Specification

2SC2525

MIN TYP. MAX UNIT

120

V

120

V

7

V

0.7 1.8

V

1.25 1.7

V

50 μA

50 μA

60

200

40

50

80

MHz

180 300 pF

0.3

μs

1.3

μs

0.2

μs

2

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