2SC2534 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SC2534 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2534
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0
400
V
V(BR)CBO Collector-base breakdown voltage
IC=1mA ; IE=0
500
V
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ; IC=0
6
V
VCEsat Collector-emitter saturation voltage IC=0.5A; IB=50mA
1.0
V
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
IC=0.5A; IB=50mA
VCB=400V ;IE=0
1.5
V
100 μA
IEBO
Emitter cut-off current
VEB=6V; IC=0
1
mA
hFE-1
DC current gain
IC=0.1A ; VCE=5V
20
固IN电C半H导AN体GE SEMICONDUCTOR hFE-2
DC current gain
Switching times
tr
Rise time
tstg
Storage time
IC=0.5A ; VCE=5V
20
VCC=200V;
IB1=-IB2=50mA;RL=400Ω
Duty cycle≤1%
1.0 μs
2.5 μs
tf
Fall time
1.0 μs
2
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