2SC2535 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SC2535 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA ; IE=0
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A
VBEsat Base-emitter saturation voltage
IC=3A; IB=0.6A
ICBO
Collector cut-off current
VCB=400V ;IE=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE
DC current gain
IC=3A ; VCE=5V
Switching times
tr
Rise time
tstg
Storage time
tf
Fall time
VCC=200V;
IB1=-IB2=0.3A;RL=68Ω
Duty cycle≤1%
Product Specification
2SC2535
MIN TYP. MAX UNIT
400
V
500
V
1.0
V
1.5
V
100
μA
1
mA
10
1.0
μs
2.5
μs
1.0
μs
2
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