2SC2429 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SC2429 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=1A ; RBE=∞
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ; IC=0
VCEsat Collector-emitter saturation voltage IC=10A; IB=2A
VBEsat Base-emitter saturation voltage
IC=10A; IB=2A
ICBO
Collector cut-off current
VCB=450V; IE=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE
DC current gain
IC=10A ; VCE=5V
fT
Transition frequency
IC=2A ; VCE=10V,f=10MHz
COB
Collector output capacitance
IE=0 ; VCB=10V;f=1MHz
Switching times
tr
Rise time
tstg
Storage time
tf
Fall time
VCC=150V,IC=10A
IB1=-IB2=2A
Product Specification
2SC2429
MIN TYP. MAX UNIT
400
V
7
V
0.45 1.0
V
1.2 2.0
V
0.1 mA
0.1 mA
10
15
40
35
MHz
230
pF
0.15 0.5 μs
1.20 2.5 μs
0.10 0.3 μs
2
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