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2SC2412S 데이터 시트보기 (PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.

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2SC2412S
HTSEMI
Shenzhen Jin Yu Semiconductor Co., Ltd.  HTSEMI
2SC2412S Datasheet PDF : 3 Pages
1 2 3
2SC2412
TRANSISTOR (NPN)
SOT-23
FEATURES
· Low Cob ,Cob = 2.0 pF (Typ).
MARKING : BQ, BR, BS
MAXIMUM RATINGS (TA=25unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
60
50
7
150
200
150
-55-150
Units
V
V
V
mA
mW
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol Test conditions
V(BR)CBO IC=50μA,IE=0
V(BR)CEO IC=1mA,IB=0
V(BR)EBO IE=50μA,IC=0
ICBO
VCB=60V,IE=0
IEBO
VEB=7V,IC=0
hFE
VCE=6V,IC=1mA
VCE(sat) IC=50mA,IB=5mA
fT
VCE=12V,IC=-2mA,f=100MHz
Cob
VCB=12V,IE=0,f=1MHz
MIN TYP MAX UNIT
60
V
50
V
7
V
0.1
μA
0.1
μA
120
560
0.4
V
160
MHz
2.0
3.5
pF
CLASSIFICATION OF hFE
Rank
Range
Marking
Q
120 - 270
BQ
R
180 - 390
BR
S
270 - 560
BS
1 
JinYu
semiconductor
www.htsemi.com

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