2SC2882 데이터 시트보기 (PDF) - Toshiba

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2SC2882

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

Toshiba 

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

2SC2882

Power Amplifier Applications

Voltage Amplifier Applications

2SC2882

Unit: mm

· Suitable for driver of 30 to 35 watts audio amplifier

· Small flat package

· PC = 1.0 to 2.0 W (mounted on ceramic substrate)

· Complementary to 2SA1202

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

Collector power dissipation

Junction temperature

Storage temperature range

VCBO

80

V

VCEO

80

V

VEBO

5

V

IC

400

mA

IB

80

mA

PC

500

PC

mW

1000

(Note 1)

Tj

150

°C

Tstg

−55 to 150

°C

Note 1: Mounted on ceramic substrate (250 mm2 × 0.8 t)

PW-MINI

JEDEC

―

JEITA

SC-62

TOSHIBA

2-5K1A

Weight: 0.05 g (typ.)

1

2002-08-19

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