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2SC2898 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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2SC2898
Hitachi
Hitachi -> Renesas Electronics Hitachi
2SC2898 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
2SC2898
Electrical Characteristics (Ta = 25°C)
Item
Collector to emitter sustain
voltage
Collector to emitter sustain
voltage
Symbol Min
VCEO(sus)
400
VCEX(sus)
400
Typ
Emitter to base breakdown
V(BR)EBO
7
voltage
Collector cutoff current
I CBO
I CEO
DC current transfer ratio
hFE1
15
hFE2
7
Collector to emitter saturation VCE(sat)
voltage
Base to emitter saturation
VBE(sat)
voltage
Turn on time
Storage time
Fall time
Note: 1. Pulse test
t on
t stg
tf
Max Unit
V
V
V
50
µA
50
µA
1.0 V
1.5 V
0.8 µs
2.0 µs
0.8 µs
Test conditions
IC = 0.2 A, RBE = ,
L = 100 mH
IC = 8 A, IB1 = 1.6 A,
IB2 = –0.8 A, VBE = –5 V,
L = 180 µH, Clamped
IE = 10 mA, IC = 0
VCB = 400 V, IE = 0
VCE = 350 V, RBE =
VCE = 5 V, IC = 4 A*1
VCE = 5 V, IC = 8 A*1
IC = 4 A, IB = 0.8 A*1
IC = 8 A, IB1 = –IB2 = 1.6 A,
VCC 150 V
Maximum Collector Dissipation Curve
60
40
20
0
50
100
150
Case temperature TC (°C)
Area of Safe Operation
100
IC(peak)
10 IC(max)(Continuous)
1.0
0.1 Ta = 25°C, 1 Shot
0.01
1 3 10 30 100 300 1,000
Collector to emitter voltage VCE (V)
2

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