2SC2740 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SC2740 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;L=25mH
VCE(sat) Collector-emitter saturation voltage IC=5A; IB=1A
VBE(sat) Base-emitter saturation voltage
IC=5A; IB=1A
ICBO
Collector cut-off current
VCB=500V IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=5V
hFE -2
DC current gain
IC=5A ; VCE=5V
fT
Transition frequency
IC=0.5A ; VCE=10V
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
VCC=10V
IC=5A; IB1=-IB2=1A
Product Specification
2SC2740
MIN TYP. MAX UNIT
400
V
1.0
V
1.5
V
100 μA
100 μA
15
8
11
MHz
1.0
μs
2.5
μs
1.0
μs
2
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