C3152 데이터 시트보기 (PDF) - Inchange Semiconductor

부품명

상세내역

제조사

C3152

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC3152

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=∞

800

V

V(BR)CBO Collector-base breakdown voltage

IC=1mA ;IE=0

900

V

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ;IC=0

7

V

VCEsat Collector-emitter saturation voltage IC=1.5A ;IB=0.3A

2.0

V

VBEsat Base-emitter saturation voltage

IC=1.5A;IB=0.3A

1.5

V

ICBO

Collector cut-off current

VCB=800V; IE=0

10

μA

IEBO

Emitter cut-off current

VEB=5V; IC=0

10

μA

hFE-1

DC current gain

IC=0.2A ; VCE=5V

10

40

hFE -2

DC current gain

IC=1A ; VCE=5V

8

COB

Output capacitance

固IN电C半H导AN体GE SEMICONDUCTOR fT

Transition frequency

Switching times

ton

Turn-on time

ts

Storage time

IE=0 ; VCB=10V;f=1MHz

IC=0.2A ; VCE=10V

IC=2A;IB1=0.4A;IB2=-0.8A

RL=20Ω,VCC=400V

60

15

1.0

3.0

pF

MHz

μs

μs

tf

Fall time

0.7

μs

‹ hFE-1 classifications

K

L

M

10-20

15-30

20-40

2

Share Link: