2SC3164 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SC3164 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3164
DESCRIPTION
·With TO-247 package
·Switching power transistor
·High breakdown voltage
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
·
Fig.1 simplified outline (TO-247) and symbol
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
固IN电C半H导AN体GE SEMICONDUCTOR VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current (DC)
CONDITIONS
Open emitter
Open base
Open collector
VALUE
500
400
7
10
UNIT
V
V
V
A
IB
Base current
4
A
PD
Total power dissipation
TC=25℃
100
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
MAX
1.25
UNIT
℃/W
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