2SC3052 데이터 시트보기 (PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.

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2SC3052

TRANSISTOR (NPN)

Shenzhen Jin Yu Semiconductor Co., Ltd.  

2SC3052

TRANSISTOR (NPN)

FEATURES

SOT-23

z Low collector to emitter saturation voltage

VCE(sat)=0.3V max(@IC=100mA,IB=10mA)

z Excellent linearity of DC forward current gain

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

1. BASE

2. EMITTER

3. COLLECTOR

Symbol

VCBO

VCEO

VEBO

IC

PC

TJ

Tstg

Parameter

Collector- Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

Value

50

50

6

0.2

150

125

-55-125

Units

V

V

V

A

mW

℃

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

Collector-base breakdown voltage

V (BR) CBO IC = 100 μA, IE=0

50

Collector-emitter breakdown voltage

V (BR) CEO IC = 100 μA, IB=0

50

Emitter-base breakdown voltage

V (BR) EBO IE= 100 μA, IC=0

6

Collector cut-off current

ICBO

VCB= 50 V , IE=0

Emitter cut-off current

IEBO

VEB= 6V , IC=0

DC current gain

hFE(1) VCE= 6V, IC= 1mA

150

hFE(2) VCE= 6V, IC= 0.1mA

50

Collector-emitter saturation voltage

VCE (sat) IC=100mA, IB= 10mA

Base-emitter saturation voltage

VBE (sat) IC= 100mA, IB= 10mA

Transition frequency

fT

VCE= 6V, IC= 10mA

180

Collector output capacitance

Cob

VCE=6V, IE=0, f=1MHz

Noise figure

NF

VCE=6V,IE=-0.1mA, f=1KHz, RG=2KΩ

MAX

0.1

0.1

800

UNIT

V

V

V

μA

μA

0.3

V

1

V

MHz

4

pF

15 dB

CLASSIFICATION OF hFE(1)

Rank

E

Range

150~300

Marking

LE

F

250~500

LF

G

400~800

LG

１　

JinYu

semiconductor

www.htsemi.com

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