C3447 데이터 시트보기 (PDF) - Inchange Semiconductor
부품명
상세내역
제조사
C3447 Datasheet PDF : 4 Pages
| |||
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3447
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; RBE=∞
500
V
V(BR)CBO Collector-base breakdown voltage
IC=1mA ; IE=0
800
V
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ; IC=0
7
V
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A
1.0
V
VBEsat Base-emitter saturation voltage
IC=3A; IB=0.6A
1.5
V
ICBO
Collector cut-off current
VCB=500V ;IE=0
10
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
μA
hFE-1
DC current gain
IC=0.6A ; VCE=5V
15
50
hFE-2
DC current gain
固IN电C半H导AN体GE SEMICONDUCTOR fT
Transition frequency
COB
Output capacitance
Switching times
ton
Turn-on time
IC=3A ; VCE=5V
IC=0.6A ; VCE=10V
IE=0;f=1MHz ; VCB=10V
VCC=200V; IC=4A
8
18
80
MHz
pF
0.5 μs
tstg
Storage time
IB1=0.8A;IB2=-1.6A;
3.0 μs
RL=50Ω
tf
Fall time
0.3 μs
hFE-1 classifications
L
M
N
15-30
20-40
30-50
2
Share Link: 