C3666 데이터 시트보기 (PDF) - Toshiba
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C3666 Datasheet PDF : 3 Pages
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3666
Audio Power Amplifier Applications
2SC3666
Unit: mm
• High DC current gain: hFE (1) = 100 to 320
• High power dissipation: PC = 1000 mW
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
Unit
30
V
30
V
5
V
1
A
0.1
A
1000
mW
150
°C
−55 to 150
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = 30 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 10 mA, IB = 0
hFE (1)
VCE = 2 V, IC = 100 mA
(Note)
hFE (2)
VCE (sat)
VBE
fT
Cob
VCE = 2 V, IC = 800 mA
IC = 800 mA, IB = 80 mA
VCE = 2 V, IC = 800 mA
VCE = 2 V, IC = 100 mA
VCB = 10 V, f = 1 MHz
Note: hFE (1) classification O: 100 to 200, Y: 160 to 320
Marking
C3666
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
JEDEC
―
JEITA
―
TOSHIBA
2-7D101A
Weight: 0.2 g (typ.)
Min Typ. Max Unit
―
― 100 nA
―
― 100 nA
30
―
―
V
100 ― 320
40
―
―
―
―
0.5
V
―
0.9 1.5
V
― 150 ― MHz
―
13
―
pF
2004-07-07
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